- Manufacture :
- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,261
In-stock
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Diodes Incorporated | MOSFET P-Ch 100 Volt 0.7A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 700 mA | 1.45 Ohms | Enhancement | |||||
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4,650
In-stock
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Diodes Incorporated | MOSFET 30V 700mA | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 700 mA | 200 mOhms | Enhancement | |||||
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2,894
In-stock
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Diodes Incorporated | MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC | - 4.5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 700 mA | 13 Ohms | - 0.96 V | 0.35 nC | Enhancement | |||
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1,558
In-stock
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Diodes Incorporated | MOSFET 20V 700mA | 12 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 300 mOhms | Enhancement | |||||
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500
In-stock
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onsemi | MOSFET PCH 0.7A 100V SOT-23 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 700 mA | 1.3 Ohms | - 2.6 V | 3.7 nC | Enhancement |
