- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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9,001
In-stock
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Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 75 mOhms | Enhancement | |||||
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63,140
In-stock
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onsemi | MOSFET -20V -3.2A P-Channel | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 112 mOhms | Enhancement | |||||
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4,373
In-stock
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onsemi | MOSFET PFET SOT23 20V 3.2A 85MO | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 112 mOhms | - 0.72 V | 7.5 nC | ||||
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4,878
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 77 mOhms | - 900 mV | 5 nC | Enhancement |
