- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,185
In-stock
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onsemi | MOSFET NFET SOT23 30V 4A TR | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | Enhancement | |||||||
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5,383
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4 A | 60 mOhms | Enhancement | |||||||
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4,541
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 1.5 V | 5.5 nC | Enhancement | |||||
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2,646
In-stock
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onsemi | MOSFET NCH 1.8V DRIVESERIES | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 38 mOhms | 400 mV | 4.7 nC | Enhancement | |||||
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1,127
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 109 mOhms | 0.4 V to 1 V | 2.2 nC | ||||||||
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12,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 600 mV | 7.3 nC | Enhancement | |||||
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8,955
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V N-Ch 305pF 8.2nC | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 52 mOhms | 0.6 V to 1.4 V | 11.7 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 1.5 V | 5.5 nC | Enhancement | PowerDI | ||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 600 mV | 7.3 nC | Enhancement |