- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,925
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 550 mA | 4 Ohms | 1.7 V | 7.6 nC | Enhancement | |||
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9,500
In-stock
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Diodes Incorporated | MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 260 mA | 4 Ohms | 700 mV | 360 pC | Enhancement | |||
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3,651
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 250 mA | 4 Ohms | Enhancement |
