- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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2,436
In-stock
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Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 60 mOhms | Enhancement | ||||
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2,554
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.3A SOT-23-3 | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 60 mOhms | 1.6 nC | |||||||
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5,383
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4 A | 60 mOhms | Enhancement |
