- Manufacture :
- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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28,071
In-stock
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Nexperia | MOSFET TAPE13 MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 850 mA | 400 mOhms | Enhancement | |||||
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GET PRICE |
84,000
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 1.2 A | 400 mOhms | 3.3 nC | ||||||
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2,923
In-stock
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Nexperia | MOSFET 40V P-channel Trench MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 1.5 A | 400 mOhms | - 1 V | 4.7 nC | Enhancement | |||
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4,061
In-stock
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Nexperia | MOSFET TAPE7 PWR-MO | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 850 mA | 400 mOhms | Enhancement | |||||
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14,800
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 1.2 A | 400 mOhms | 3.3 nC |
