- Manufacture :
- Maximum Operating Temperature :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
525
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 92 mOhms | 1 V | 8.6 nC | Enhancement | |||
|
|
1,497
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 100V 3.5A 3.2nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.5 A | 92 mOhms | 1.5 V | 3.2 nC | Enhancement |
