- Manufacture :
- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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33,217
In-stock
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Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | |||
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16,631
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 20Vgss 300Pd 200mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | 1.2 V | - | Enhancement | |||
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2,692
In-stock
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Diodes Incorporated | MOSFET N-Chnl 50V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | Enhancement | |||||
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8,650
In-stock
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Nexperia | MOSFET 30V 400 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 1.4 Ohms | ||||||
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10,312
In-stock
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Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | |||
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10,229
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -330mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement |
