- Manufacture :
- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,321,100
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.1 A | 35 mOhms | 1 V | 3.6 nC | Enhancement | |||
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27,186
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.6 A | 34 mOhms | 1 V | 7.2 nC | Enhancement | |||
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9,853
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 1 V | 8.3 nC | Enhancement | |||
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2,644
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 48 mOhms | 1 V | 6 nC | Enhancement | ||||
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6,373
In-stock
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Nexperia | MOSFET 40V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2.1 A | 95 mOhms | 1 V | 3.6 nC | Enhancement | |||
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2,818
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 31 mOhms | 1 V | 6.3 nC | Enhancement | |||
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2,721
In-stock
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Nexperia | MOSFET PMV100ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 54 mOhms | 1 V | 5.5 nC | Enhancement | |||
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4,042
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | |||
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12,496
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 mA | 1.5 Ohms | 1 V | 821 pC | Enhancement | |||
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2,960
In-stock
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Nexperia | MOSFET PMV50ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.9 A | 30 mOhms | 1 V | 10 nC | Enhancement | |||
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1,599
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 250 mA | 2.1 Ohms | 1 V | 7.6 nC | Enhancement | |||
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9,955
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | |||
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525
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 92 mOhms | 1 V | 8.6 nC | Enhancement | |||
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1,873
In-stock
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Diodes Incorporated | MOSFET 60V Dual N-Ch Enh 7.5Ohm 5V Vgs 0.23A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 2 Ohms | 1 V | 300 pC | Enhancement | |||
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844
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 1 V | 13.2 nC | Enhancement | |||
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6,148
In-stock
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Nexperia | MOSFET 2N7002/TO-236AB/REEL 11" Q3/T4 | 30 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 2.8 Ohms | 1 V | Enhancement | ||||
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8,900
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 240V 20Vgss | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 480 mA | 1.5 Ohms | 1 V | 6.6 nC | Enhancement | |||
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5,965
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | 1 V | 0.6 nC | Enhancement | |||
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VIEW | Nexperia | MOSFET PMV90ENE/TO-236AB/REEL 7" Q3/T | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 50 mOhm | 1 V | 3.6 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | 1 V | 0.6 nC | Enhancement | |||
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1,809
In-stock
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Nexperia | MOSFET N-Chan 20V 2A | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.2 A | 76 mOhms | 1 V | 3.9 nC | Enhancement |
