- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,998
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID -2A, VDSS -30V | - 25 V to + 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 125 mOhms | - 2.2 V | 3.4 nC | Enhancement | |||
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5,134
In-stock
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Toshiba | MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.4 Ohms | - 1.5 V | |||||
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3,132
In-stock
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Toshiba | MOSFET P-Ch Small Signal 270pF -2A -20V 4.6nC | 8 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 311 mOhms | - 0.3 V to - 1 V | 4.6 nC | ||||
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6,000
In-stock
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Toshiba | MOSFET Small-signal Nch MOSFET ID:0.4A | 20 V | SMD/SMT | SOT-346-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | ||||
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257
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET Id 0.2A 60V 20VGSS | SMD/SMT | SOT-346-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V |
