- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (4)
- 1.58 mOhms (1)
- 1.6 mOhms (2)
- 10.3 mOhms (1)
- 10.7 mOhms (2)
- 10.8 mOhms (1)
- 100 mOhms (2)
- 12 mOhms (1)
- 12.3 mOhms (2)
- 13.6 mOhms (1)
- 15.4 mOhms (1)
- 17.5 mOhms (2)
- 2 mOhms (2)
- 2.1 mOhms (2)
- 2.3 mOhms (6)
- 2.4 mOhms (2)
- 2.5 mOhms (1)
- 2.7 mOhms (4)
- 2.8 mOhms (2)
- 20 mOhms (1)
- 20.3 mOhms (1)
- 28 mOhms (2)
- 3 mOhms (2)
- 3.2 mOhms (2)
- 3.3 mOhms (3)
- 3.4 mOhms (2)
- 3.5 mOhms (2)
- 3.6 mOhms (2)
- 3.7 mOhms (2)
- 3.9 mOhms (1)
- 4.2 mOhms (3)
- 4.4 mOhms (4)
- 4.6 mOhms (2)
- 4.7 mOhms (2)
- 4.8 mOhms (2)
- 4.9 mOhms (1)
- 5.3 mOhms (1)
- 5.4 mOhms (3)
- 5.5 mOhms (1)
- 5.6 mOhms (1)
- 5.8 mOhms (3)
- 51 mOhms (2)
- 53 mOhms (1)
- 6.2 mOhms (1)
- 6.5 mOhms (2)
- 6.7 mOhms (3)
- 7.1 mOhms (1)
- 7.2 mOhms (2)
- 7.6 mOhms (2)
- 7.7 mOhms (1)
- 8 mOhms (1)
- 9 mOhms (1)
- 9.1 mOhms (2)
- 9.4 mOhms (1)
- 9.6 mOhms (4)
- 9.7 mOhms (1)
- Qg - Gate Charge :
-
- - (2)
- 100 nC (2)
- 11 nC (2)
- 117 nC (7)
- 134 nC (1)
- 150 nC (1)
- 158 nC (1)
- 160 nC (1)
- 165 nC (2)
- 166 nC (2)
- 18 nC (1)
- 206 nC (2)
- 211 nC (2)
- 23 nC (1)
- 233 nC (1)
- 246 nC (1)
- 250 nC (2)
- 270 nC (1)
- 29 nC (6)
- 31 nC (1)
- 32 nC (2)
- 33 nC (2)
- 346 nC (2)
- 35 nC (2)
- 39 nC (1)
- 41 nC (1)
- 47 nC (1)
- 49 nC (2)
- 51 nC (1)
- 54 nC (1)
- 55 nC (2)
- 60 nC (1)
- 61 nC (1)
- 64 nC (1)
- 66 nC (2)
- 68 nC (2)
- 69 nC (2)
- 79 nC (2)
- 82 nC (2)
- 86 nC (2)
- 87 nC (5)
- 90 nC (1)
- 91 nC (1)
- 93 nC (2)
- 98 nC (2)
- 99 nC (1)
107 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
23,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
3,632
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
29,260
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
29,560
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
|
2,173
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | |||
|
|
2,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
19,680
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
|
|
2,023
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
10,350
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 83 A | 10.8 mOhms | 41 nC | Enhancement | OptiMOS | |||
|
|
8,790
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
3,963
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.7 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
1,809
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | Enhancement | OptiMOS | |||||
|
|
3,745
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.7 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | |||
|
|
2,700
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | |||
|
|
4,441
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.4 mOhms | 1 V | 11 nC | Enhancement | OptiMOS | |||
|
|
1,910
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | |||
|
|
1,385
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
413
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
9,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
|
|
1,890
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.7 mOhms | Enhancement | OptiMOS | ||||||
|
|
977
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
1,216
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.6 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
|
|
654
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
18,600
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||
|
|
1,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
|
|
1,426
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15.4 mOhms | 2.4 V | 64 nC | Enhancement | OptiMOS | |||
|
|
880
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | 1.2 V | 233 nC | Enhancement | OptiMOS | |||
|
|
690
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS | |||
|
|
1,128
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
|
|
770
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS |
