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Packaging :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode Tradename
IPP50R520CPXKSA1
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RFQ
466
In-stock
Infineon Technologies MOSFET N-Ch 550V 7.1A TO220-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 7.1 A 520 mOhms 13 nC   CoolMOS
IPA50R520CP
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RFQ
176
In-stock
Infineon Technologies MOSFET N-Ch 500V 7A TO220FP-3 CoolMOS CP 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 7.1 A 520 mOhms 13 nC Enhancement CoolMOS
IPS50R520CP
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RFQ
1,185
In-stock
Infineon Technologies MOSFET N-Ch 500V 7.1A IPAK-3 CoolMOS CP 20 V Through Hole TO-251-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 7.1 A 520 mOhms   Enhancement CoolMOS
IPD60R520C6
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RFQ
1,160
In-stock
Infineon Technologies MOSFET N-Ch 600V 8.1A DPAK-2 CoolMOS C6 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 8.1 A 520 mOhms 23.4 nC Enhancement CoolMOS
IPD50R520CP
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RFQ
803
In-stock
Infineon Technologies MOSFET N-Ch 550V 7.1A DPAK-2 CoolMOS CP 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 7.1 A 520 mOhms   Enhancement CoolMOS
IPB60R520CP
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RFQ
167
In-stock
Infineon Technologies MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel GaN N-Channel 600 V 6.8 A 520 mOhms   Enhancement CoolMOS
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