- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1 A (3)
- 1.5 A (1)
- 100 A (7)
- 120 A (7)
- 122 A (1)
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- 150 A (1)
- 17 A (3)
- 180 A (3)
- 192 A (1)
- 220 A (3)
- 230 A (1)
- 25 A (2)
- 270 A (3)
- 320 A (1)
- 34 A (2)
- 37 A (2)
- 43 A (4)
- 44 A (1)
- 45 A (1)
- 46 A (1)
- 50 A (2)
- 58 A (2)
- 60 A (2)
- 61 A (2)
- 64 A (2)
- 70 A (6)
- 80 A (13)
- 83 A (2)
- 84 A (2)
- 88 A (4)
- 89 A (2)
- 90 A (2)
- 97 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (1)
- 1.88 mOhms (2)
- 10.6 mOhms (2)
- 11 mOhms (2)
- 12.8 mOhms (1)
- 15.5 mOhms (2)
- 150 mOhms (1)
- 16 mOhms (2)
- 17.5 mOhms (2)
- 19 mOhms (2)
- 2.1 mOhms (1)
- 2.3 mOhms (1)
- 2.4 mOhms (2)
- 2.7 mOhms (1)
- 28 mOhms (2)
- 3 mOhms (1)
- 3.1 mOhms (3)
- 3.3 mOhms (2)
- 3.5 mOhms (5)
- 3.7 mOhms (2)
- 3.9 mOhms (2)
- 36 mOhms (1)
- 4 mOhms (5)
- 4.2 mOhms (2)
- 4.3 mOhms (2)
- 4.6 mOhms (2)
- 4.7 mOhms (2)
- 4.8 mOhms (2)
- 4.9 mOhms (2)
- 40 Ohms (4)
- 5 mOhms (3)
- 5.6 mOhms (3)
- 5.9 mOhms (2)
- 51 mOhms (2)
- 6.2 mOhms (5)
- 6.4 mOhms (1)
- 7.2 mOhms (1)
- 7.9 mOhms (1)
- 8 mOhms (1)
- 8.4 mOhms (3)
- 85 mOhms (2)
- 9.1 mOhms (2)
- 9.4 mOhms (2)
- 9.9 mOhms (4)
- Qg - Gate Charge :
-
- 100 nC (1)
- 110 nC (1)
- 116 nC (1)
- 117 nC (2)
- 134 nC (2)
- 136 nC (3)
- 150 nC (1)
- 167 nC (1)
- 170 nC (2)
- 178 nC (1)
- 180 nC (1)
- 183 nC (1)
- 188 nC (1)
- 189 nC (1)
- 19 nC (2)
- 200 nC (3)
- 206 nC (2)
- 210 nC (1)
- 211 nC (3)
- 22.7 nC (1)
- 23.5 nC (3)
- 230 nC (1)
- 25 nC (2)
- 26 nC (1)
- 260 nC (1)
- 29 nC (4)
- 30 nC (3)
- 31 nC (2)
- 35 nC (4)
- 40 nC (1)
- 41 nC (3)
- 42 nC (1)
- 43 nC (3)
- 47 nC (1)
- 55 nC (4)
- 56 nC (1)
- 65 nC (2)
- 68 nC (3)
- 69 nC (2)
- 82 nC (4)
- 86 nC (4)
- 87 nC (5)
- 93 nC (4)
- 95 nC (1)
- 98 nC (2)
93 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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81
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
|
90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
|
|
87
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
|
20,530
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
3,135
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
4,625
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
|
|
1,907
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
14,250
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
785
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | ||||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
1,713
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
948
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 5 mOhms | 2 V | 189 nC | Enhancement | ||||
|
|
615
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 44 A | 36 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
GET PRICE |
13,330
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
|
|
1,732
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | OptiMOS | |||
|
|
2,684
In-stock
|
IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | |||
|
|
5,909
In-stock
|
STMicroelectronics | MOSFET N-channel 60 V, 0.0025 mOhm typ., 80 A STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3 mOhms | 2 V | 40 nC | Enhancement | ||||
|
|
589
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
3,109
In-stock
|
IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | ||||
|
|
446
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
2,956
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | ||||
|
|
354
In-stock
|
IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-263HV | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | |||||
|
|
41,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
572
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 89A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 89 A | 2.4 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
954
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.3 mOhms | 2 V | 183 nC | Enhancement | ||||
|
|
469
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
498
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 9.4 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
3,520
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 6.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
12,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS |
