- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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997
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET MOSFET N CH 60V 75A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 75 A | 6 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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224
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC |
