- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,421
In-stock
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IR / Infineon | MOSFET 80V DUAL N-CH HEXFET 73mOhm VGS 10V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 15 nC | Enhancement | |||||
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4,458
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 11 A | 16.3 mOhms | 1.8 V | 15 nC | |||||
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1,903
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 80V 3.6A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 4 V | 15 nC | |||||
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1,978
In-stock
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Texas instruments | MOSFET 30V Dual N-Ch Common Drain NexFET | 20 V | SMD/SMT | BGA-10 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 14 A | 9.3 mOhms | 1.3 V | 15 nC | NexFET | ||||
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690
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Chan Dual Cool PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 49 A | 2.9 mOhms | 1.7 V | 15 nC |
