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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
19,680
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||
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GET PRICE |
23,270
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 180 A | 2.9 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||
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GET PRICE |
1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 180 A | 2.9 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||
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GET PRICE |
9,000
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||
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GET PRICE |
110
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.5 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||
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GET PRICE |
984
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.5 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||
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GET PRICE |
500
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.5 mOhms | 2 V | 211 nC | Enhancement |
