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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,740
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 52 mOhms | 3 V | 8.7 nC | OptiMOS | ||||
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4,720
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | ||||
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4,566
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET SH | 20 V | SMD/SMT | DirectFET-SH | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 53 mOhms | 8.7 nC | Enhancement | |||||
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2,186
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | OptiMOS | |||
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2,485
In-stock
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Diodes Incorporated | MOSFET 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 178 mOhms | 1 V | 8.7 nC | Enhancement | ||||
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1,197
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 2.3 A | 160 mOhms | 800 mV | 8.7 nC | Enhancement | ||||
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4,305
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 7 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 7 mOhms | 1.6 V | 8.7 nC | |||||
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2,503
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 14 mOhms | 8.7 nC | Enhancement | |||||
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VIEW | onsemi | MOSFET TRENCH 3.1 30V 7 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 12 mOhms | 1.6 V | 8.7 nC |