- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,687
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | |||
|
|
491
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 400mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 400 mA | 3.1 Ohms | 2.1 V | - | Enhancement | |||
|
|
1,050
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | |||
|
|
1,316
In-stock
|
Infineon Technologies | MOSFET N-Ch 400V 500mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 500 mA | 2.2 Ohms | 2.1 V | - | Enhancement | |||
|
|
276
In-stock
|
Infineon Technologies | MOSFET N-Ch 400V 500mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 500 mA | 2.2 Ohms | 2.1 V | - | Enhancement | |||
|
|
2,999
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 400mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 400 mA | 3.1 Ohms | 2.1 V | - | Enhancement |
