- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
-
- - 100 V (1)
- - 150 V (1)
- - 200 V (1)
- - 30 V (1)
- - 40 V (2)
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- Id - Continuous Drain Current :
-
- - 10 A (1)
- - 100 A (3)
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- - 18.5 A (1)
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- 1 A (3)
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- 1.6 A (1)
- 10.6 A (1)
- 100 A (29)
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- 11 A (8)
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- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
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- 60 mOhms (1)
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - (2)
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- 95.4 nC (1)
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- 99 nC (2)
- Channel Mode :
- Applied Filters :
533 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
|
|
7,833
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | ||||||||
|
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23,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
3,632
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
3,499
In-stock
|
IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4.5 Ohms | Enhancement | ||||||
|
|
29,260
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
6,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | ||||
|
|
29,560
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
|
1,482
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Ch Logic PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 5.5 mOhms | Enhancement | PowerTrench | |||||
|
|
2,173
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | |||
|
|
1,191
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 15 mOhms | Enhancement | PowerTrench | |||||
|
|
5,333
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Chan 12Mohm PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 74 A | 9.7 Ohms | Enhancement | PowerTrench | |||||
|
|
1,287
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 1.9 mOhms | Enhancement | PowerTrench | |||||
|
|
1,006
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.5 mOhms | Enhancement | PowerTrench | |||||
|
|
1,919
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CH Logic Level PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.5 mOhms | Enhancement | PowerTrench | |||||
|
|
26,110
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | |||
|
|
1,030
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 92 A | 9.25 mOhms | 4 V | 47 nC | PowerTrench | ||||||
|
|
GET PRICE |
14,370
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 120Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 10.5 mOhms | Enhancement | |||||
|
|
12,690
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 164 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
|
2,052
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 A | 2.4 mOhms | Enhancement | PowerTrench | |||||
|
|
1,114
In-stock
|
Fairchild Semiconductor | MOSFET Discrete Auto N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | Enhancement | PowerTrench | |||||
|
|
2,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
750
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 214 A | 3 mOhms | 4 V | 89 nC | PowerTrench | ||||||
|
|
1,314
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-CHANNEL POWERTRENCH MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 105 A | 6.7 mOhms | 4 V | 64.5 nC | PowerTrench | ||||||
|
|
1,030
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 6.25 mOhms | 4 V | 77 nC | PowerTrench | ||||||
|
|
1,569
In-stock
|
Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.1 mOhms | Enhancement | PowerTrench | |||||
|
|
508
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 99 mOhms | 119 nC | CoolMOS | |||||
|
|
1,717
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 70mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 44 A | 70 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
|
|
1,243
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS |
