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Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode
SSM6N15FE(TE85L,F)
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RFQ
Toshiba MOSFET Dual N-ch 30V 0.1A SMD/SMT ES6-6 - 55 C + 150 C Reel 2 Channel Si N-Channel 30 V 100 mA 4 Ohms Enhancement
SSM6K30FE
VIEW
RFQ
Toshiba MOSFET Vds=20V Id=1.2A 6Pin SMD/SMT ES6-6 - 55 C + 150 C Reel 1 Channel Si N-Channel 20 V 1.2 A 210 mOhms Enhancement
SSM6K31FE
VIEW
RFQ
Toshiba MOSFET Vds=30V Id=2.3A 6Pin SMD/SMT ES6-6 - 55 C + 150 C Reel 1 Channel Si N-Channel 20 V 1.2 A 320 mOhms Enhancement
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