- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,955
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Toshiba | MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A | 20 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 4 A | 108 mOhms | 400 mV | 3.6 nC | Enhancement | ||
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1,232
In-stock
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Toshiba | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | 20 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | 1.3 V to 2.5 V | 2.5 nC |
