- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,527
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | ||||
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2,469
In-stock
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Fairchild Semiconductor | MOSFET PT7 N-ch 60/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 5 mOhms | 1 V | 63 nC | PowerTrench Power Clip | ||||
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26,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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113,700
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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GET PRICE |
7,840
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||
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211
In-stock
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IXYS | MOSFET 175V 150A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 175 V | 150 A | 12 mOhms | 2.5 V to 4.5 V | 63 nC | Enhancement | ||||
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615
In-stock
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Fairchild Semiconductor | MOSFET MV7 60/20V 1000A N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 6 mOhms | 2 V | 63 nC | Enhancement | ||||
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142
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 401 mOhms | 3 V | 63 nC | Enhancement | SuperFET II | |||
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501
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 190 mOhms | 63 nC | CoolMOS | |||||
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1,011
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 91 A | 7.5 mOhms | 63 nC | Enhancement | |||||
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191
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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GET PRICE |
3,660
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||
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611
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | ||||||
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384
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | ||||||
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3,013
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 63 nC | |||||
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44
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | ||||||
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706
In-stock
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Infineon Technologies | MOSFET 55V SINGLE N-CH HEXFET PWR MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 4 V | 63 nC | Enhancement |
