- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,377
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.4 mOhms | 1.2 V | 95 nC | Enhancement | OptiMOS | ||||
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1,469
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 21A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 190 mOhms | 3 V | 95 nC | CoolMOS | |||||
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146
In-stock
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IXYS | MOSFET 6Amps 1000V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | ||||||||
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49
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 6A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | |||||||
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58
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 6A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | |||||||
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17
In-stock
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IXYS | MOSFET 21 Amps 500V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 220 mOhms | 4.5 V | 95 nC | Enhancement | ISOPLUS i4-PAC | ||||
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14,900
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.4 mOhms | 1.2 V | 95 nC | Enhancement | |||||
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4
In-stock
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IXYS | MOSFET -16 Amps -200V 0.22 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 16 A | 160 mOhms | - 5 V | 95 nC | Enhancement | |||||
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2,349
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 82mOhms 63.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 21 A | 82 mOhms | 4 V | 95 nC |