- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
37 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,462
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 28 A | 65 mOhms | 42 nC | Enhancement | |||||
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4,413
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | Enhancement | ||||
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4,887
In-stock
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Fairchild Semiconductor | MOSFET 100V/20V N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 12 mOhms | 2 V | 42 nC | Enhancement | PowerTrench | |||
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5,889
In-stock
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STMicroelectronics | MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | 1 V to 2.5 V | 42 nC | Enhancement | |||||
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3,200
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | |||||
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2,965
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -28A 65mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | 42 nC | Enhancement | |||||
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2,474
In-stock
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Fairchild Semiconductor | MOSFET N-channel Power Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3.2 V | 42 nC | Enhancement | PowerTrench | |||
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229,100
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | - 4 V | 42 nC | |||||
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1,282
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | |||||
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1,734
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | 42 nC | Enhancement | ||||||
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1,513
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | |||||
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427
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | |||
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1,265
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 4 V | 42 nC | Enhancement | ||||
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1,309
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.6 mOhms | 2.2 V | 42 nC | Enhancement | ||||
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3,400
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | |||||
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588
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | ||||||
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520
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||||
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591
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 6.2 mOhms | 42 nC | OptiMOS | |||||
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648
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.9 mOhms | 2.2 V | 42 nC | Enhancement | ||||
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822
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 4.3mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 3.9 V | 42 nC | Enhancement | CoolIRFet | |||
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537
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | 42 nC | Enhancement | CoolMOS | ||||
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162
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | |||
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384
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 3.2mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 2.2 V to 3.9 V | 42 nC | Enhancement | CoolIRFet | |||
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106
In-stock
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 7 mOhms | 4 V | 42 nC | Enhancement | TrenchT2 | |||
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9,310
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 4.3 mOhms | 1.8 V | 42 nC | NexFET | ||||
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3,000
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power M... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | 2 V | 42 nC | Enhancement | STripFET | |||
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2,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power M... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | 2 V | 42 nC | Enhancement | STripFET | |||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | 1 V | 42 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 12V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7 A | 10 mOhms | 42 nC |