- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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457
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | |||
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1,490
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 69 A | 5.7 mOhms | 2 V | 45 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | |||
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385
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 100 V | 69 A | 11.8 mOhms | Enhancement |
