- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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22,748
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel Sm Sig | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | ||||
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3,160
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||
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3,580
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | |||
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3,048
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||
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1,601
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||
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4,245
In-stock
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Fairchild Semiconductor | MOSFET NCh Enhancement Mode | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement |
