- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,243
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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564
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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800
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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569
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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455
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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1,209
In-stock
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Fairchild Semiconductor | MOSFET 200V Single | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 31 A | 75 mOhms | Enhancement | ||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 1.9 mOhms | Enhancement | PowerTrench | |||||
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1,719
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 2 V to 4 V | 37 nC | Enhancement | ||||
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2,489
In-stock
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IR / Infineon | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 34 mOhms | 4 V | 37 nC | |||||
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3,682
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 31 A | 13.8 mOhms | 2 V | 10 nC | Enhancement | OptiMOS | |||
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1,192
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 4 V | 37 nC | Enhancement | ||||
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630
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 37 nC | ||||||||
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113
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CPA | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 99 mOhms | Enhancement | CoolMOS | |||||
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38
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 31 A | 13.8 mOhms | 2 V | 10 nC | Enhancement | OptiMOS |
