- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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25,834
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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33,861
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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17,194
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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6,493
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.406 Ohms | 1.3 V | 600 pC | Enhancement | ||||
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3,854
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.406 Ohms | 1.3 V | 600 pC | Enhancement | ||||
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1,687
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | ||||
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1,050
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | ||||
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8,460
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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3,506
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement |