MOSFET - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	IRFR4104PBF	1+ $1.650 10+ $1.400 100+ $1.120 500+ $0.977		PDF RFQ	561 In-stock	Infineon Technologies	MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	119 A	5.5 mOhms	2 V to 4 V	59 nC	Enhancement
	AUIRFU4104	1+ $1.840 10+ $1.560 100+ $1.250 500+ $1.090		PDF RFQ	194 In-stock	Infineon Technologies	MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms	20 V	Through Hole	TO-251-3	- 55 C		Tube	1 Channel	Si	N-Channel	40 V	119 A	5.5 mOhms		59 nC	Enhancement
	IRFR4104TRLPBF	1+ $1.640 10+ $1.390 100+ $1.110 500+ $0.977 3000+ $0.751	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	119 A	5.5 mOhms	4 V	59 nC	Enhancement
	AUIRFR4104TRL	3000+ $0.843 6000+ $0.812 9000+ $0.752	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms	20 V	SMD/SMT	TO-252-3	- 55 C		Reel	1 Channel	Si	N-Channel	40 V	119 A	5.5 mOhms		59 nC	Enhancement
	IRFR4104TRRPBF	3000+ $0.751 6000+ $0.723 9000+ $0.670	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	119 A	5.5 mOhms	4 V	59 nC	Enhancement
	AUIRFR4104	3000+ $0.843 6000+ $0.812 9000+ $0.752	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms	20 V	SMD/SMT	TO-252-3	- 55 C		Tube	1 Channel	Si	N-Channel	40 V	119 A	5.5 mOhms		59 nC	Enhancement
	AUIRFR4104TRR		GET PRICE VIEW	PDF RFQ		IR / Infineon	MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms	20 V	SMD/SMT	TO-252-3	- 55 C		Reel	1 Channel	Si	N-Channel	40 V	119 A	5.5 mOhms		59 nC	Enhancement

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