- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,458
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | Enhancement | |||||
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19,440
In-stock
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IR / Infineon | MOSFET MOSFT PCh -150V -27A 150mOhm 21nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | ||||||||
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GET PRICE |
7,410
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode -30V Low Rdson -20Vgss | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 27 A | 20 mOhms | - 1 V | 22 nC | Enhancement |