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Package / Case :
Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRF6218PBF
1+
$2.490
10+
$2.120
100+
$1.690
250+
$1.610
RFQ
2,458
In-stock
IR / Infineon MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 150 V - 27 A 150 mOhms   21 nC Enhancement
IRF6218STRLPBF
1+
$2.420
10+
$2.060
100+
$1.650
500+
$1.440
800+
$1.200
RFQ
19,440
In-stock
IR / Infineon MOSFET MOSFT PCh -150V -27A 150mOhm 21nC 20 V SMD/SMT TO-252-3     Reel 1 Channel Si P-Channel - 150 V - 27 A 150 mOhms   21 nC  
DMP3028LK3-13
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RFQ
7,410
In-stock
Diodes Incorporated MOSFET P-Ch Enh Mode -30V Low Rdson -20Vgss 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 27 A 20 mOhms - 1 V 22 nC Enhancement
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