- Manufacture :
- Mounting Style :
- Package / Case :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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42,620
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||
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GET PRICE |
14,020
In-stock
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IR / Infineon | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||
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949
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||
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809
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | - 4 V | 64.7 nC | Enhancement | |||
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371
In-stock
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IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 117mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||
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1,500
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | Enhancement |
