- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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485
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 13.4A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.4 A | 330 mOhms | Enhancement | CoolMOS | ||||
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240
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 13.4A TO247-3 CoolMOS CFD | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.4 A | 330 mOhms | Enhancement | CoolMOS | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13.4 A | 7.9 mOhms | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 13.4A TO220-3 CoolMOS CFD | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.4 A | 330 mOhms | Enhancement | CoolMOS |