- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,580
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | 20 V | SMD/SMT | DirectFET-SJ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.7 A | 28 mOhms | 14 nC | Enhancement | Directfet | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 5.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | ||||
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765
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | ||||
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729
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.7 A | 50 mOhms | Enhancement | |||||||
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443
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.7A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.7 A | 1 Ohms | Enhancement | CoolMOS | ||||||
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127
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.7A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.7 A | 1 Ohms | Enhancement | CoolMOS | ||||||
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251
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 5.7A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | CoolMOS | |||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.7A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.7 A | 1 Ohms | 34 nC | Enhancement | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS |