- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,920
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | ||||||
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4,809
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 150 mOhms | 4 V | 6.9 nC | Enhancement | ||||
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336
In-stock
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Infineon Technologies | MOSFET 150V 2 x N-CH 8.7A for Digital Audio | 20 V | Through Hole | TO-220-3 | - 40 C | Tube | 2 Channel | Si | N-Channel | 150 V | 8.7 A | 80 mOhms | 13 nC | Enhancement | ||||||
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660
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | |||||
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774
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 150V 8.7A 5-Pin | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 2 Channel | Si | N-Channel | 150 V | 8.7 A | 80 mOhms | 13 nC | Enhancement | ||||||
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550
In-stock
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IR / Infineon | MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC |