- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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522
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 32.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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445
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 32.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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293
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 340 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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2,500
In-stock
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onsemi | MOSFET 30V 136A 4.3 mOhm Single N-Chan SO-8 | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.1 A | 3.6 mOhms | 1.5 V | 58.9 nC | |||||
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VIEW | Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 340 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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2,217
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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2,505
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 9.9A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS |
