- Rds On - Drain-Source Resistance :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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113,700
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||||
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845
In-stock
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Infineon Technologies | MOSFET HIGH POWER_PRC/PRFRM | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 190 Ohms | 3.5 V | 37 nC | Enhancement | CoolMOS | ||||
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507
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 190 mOhms | 73 nC | CoolMOS | ||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 190 mOhms | 73 nC | CoolMOS | ||||||
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501
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 190 mOhms | 63 nC | CoolMOS | ||||||
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191
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS |