- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
250
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 1.5 V | 82 nC | Enhancement | NexFET | ||||
|
2,000
In-stock
|
Toshiba | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 2.5 V | 76 nC | Enhancement | |||||
|
27,280
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.9 mOhms | 1.1 V | 30 nC | Enhancement | NexFET | ||||
|
2,394
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 1.5 V | 82 nC | Enhancement |