- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
9,423
In-stock
|
Diodes Incorporated | MOSFET 100V N-Channel 2A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.9 A | 250 mOhms | Enhancement | |||||
|
|
1,739
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | |||
|
|
906
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | |||
|
|
360
In-stock
|
onsemi | MOSFET 30V 3.9A Dual N-Channel | 20 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.9 A | 200 mOhms | 3.6 nC | Enhancement | ||||
|
|
97
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.9 A | 122 mOhms | 3 V | 14.9 nC | Enhancement | |||
|
|
VIEW | Toshiba | MOSFET Singel N-ch 30V 2.9A | 20 V | SMD/SMT | TSM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.9 A | 83 mOhms | Enhancement |
