- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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32,976
In-stock
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onsemi | MOSFET SOT-223 P-CH ENHANCE | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 95 mOhms | Enhancement | |||||
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6,040
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 N-CH 30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.5 A | 95 mOhms | Enhancement | PowerTrench | |||||
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6,373
In-stock
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Nexperia | MOSFET 40V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2.1 A | 95 mOhms | 1 V | 3.6 nC | Enhancement | ||||
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51
In-stock
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Diodes Incorporated | MOSFET N Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.9 A | 95 mOhms | Enhancement | ||||||
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463
In-stock
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onsemi | MOSFET PFET FTKY S08 30V TR 3.8A | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 95 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Transistr95ohm250V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 95 mOhms | 2 V to 4 V | 11 nC | Enhancement |
