- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,231
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 P-CH -30V | 20 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 160 mOhms | Enhancement | PowerTrench | |||||
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5,229
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL N/PCh 25V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 3.5 A | 160 mOhms | 9.4 nC | ||||||||
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3,880
In-stock
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STMicroelectronics | MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI | 20 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 160 mOhms | 4 V | 6.4 nC | |||||||
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4,094
In-stock
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Diodes Incorporated | MOSFET 70V P-Channel 5.7A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 5.7 A | 160 mOhms | - 1 V | 9.6 nC | Enhancement | ||||
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2,310
In-stock
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Fairchild Semiconductor | MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak | 20 V | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.8 A | 160 mOhms | 2.71 nC | Enhancement | PowerTrench | ||||
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45,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 24.3A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24.3 A | 160 mOhms | Enhancement | CoolMOS | |||||
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5,720
In-stock
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IR / Infineon | MOSFET MOSFT 55V 1.9A 160mOhm 7nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | ||||||||
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571
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 160 mOhms | 3 V | 75 nC | CoolMOS | ||||
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1,344
In-stock
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Infineon Technologies | MOSFET 25V DUAL N / P CH 20 VGS MAX V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 25 V | 3.5 A | 160 mOhms | 9.4 nC | Enhancement | |||||
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2,021
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | Enhancement | |||||
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1,200
In-stock
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Diodes Incorporated | MOSFET P-Ch 70V 3.7A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 3.7 A | 160 mOhms | Enhancement | ||||||
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394
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 200V 0.15 OHM - 15A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 15 A | 160 mOhms | Enhancement | ||||||
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1,197
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 2.3 A | 160 mOhms | 800 mV | 8.7 nC | Enhancement | ||||
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533
In-stock
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STMicroelectronics | MOSFET 200V 0.15Ohm 15A N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15 A | 160 mOhms | Enhancement | ||||||
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590
In-stock
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STMicroelectronics | MOSFET P-CH 60V 0.13Ohm 10A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 160 mOhms | 2 V to 4 V | 6.4 nC | |||||
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GET PRICE |
60,300
In-stock
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STMicroelectronics | MOSFET N Ch 55V 3.2 120A Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 15 A | 160 mOhms | Enhancement | |||||
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775
In-stock
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Infineon Technologies | MOSFET Automotive MOSFET 55V, 1.9A, 160 mOhm | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.7 A | 160 mOhms | 4 V | 7 nC | |||||
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4
In-stock
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IXYS | MOSFET -16 Amps -200V 0.22 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 16 A | 160 mOhms | - 5 V | 95 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 32A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 33 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 33 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 400V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.15 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 400V 0.16 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET |
