- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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68
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | Enhancement | HyperFET | |||||
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20
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | Enhancement | HyperFET | |||||
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19
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | 5 V | 240 nC | Enhancement | PolarHT |
