- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,594
In-stock
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Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 23 A | 2.4 mOhms | 1.7 V | 32 nC | PowerTrench SyncFET | ||||||
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2,580
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.4 mOhms | 1.7 V | 20 nC | PowerTrench SyncFET | ||||
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1,699
In-stock
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Fairchild Semiconductor | MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.4 mOhms | 3.3 V | 75 nC | Enhancement | PowerTrench | |||
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2,052
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 A | 2.4 mOhms | Enhancement | PowerTrench | |||||
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39,600
In-stock
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Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | |||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.4 mOhms | 4 V | 183 nC | Enhancement | ||||
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927
In-stock
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IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | |||||
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213
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 229 A | 2.4 mOhms | 4.5 V | 137 nC | Enhancement | PowerTrench | |||
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18,400
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | ||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 2.4 mOhms | 36 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 2.4 mOhms | Enhancement | OptiMOS | |||||
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3,117
In-stock
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IR / Infineon | MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 2.4 mOhms | 160 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI | 20 V | SMD/SMT | H2PAK-2 | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.4 mOhms | 4 V | 183 nC | |||||||
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580
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | OptiMOS | |||
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2,725
In-stock
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IR / Infineon | MOSFET MOSFET, 25V,70A 2.4 mo, 16nC,PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 30 A | 2.4 mOhms | 1.6 V | 32 nC | |||||||
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159
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 150 nC | OptiMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 FL | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.4 mOhms | 2 V | 37 nC | OptiMOS | ||||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement |
