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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STH260N6F6-6
1+
$4.400
10+
$3.740
100+
$3.240
250+
$3.070
1000+
$2.330
RFQ
1,000
In-stock
STMicroelectronics MOSFET POWER MOSFET 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 180 A 2.4 mOhms 4 V 183 nC Enhancement
STP260N6F6
1000+
$3.220
2000+
$2.940
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 60V 0.0016 Ohm 180A DeepGATE VI 20 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 75 V 120 A 2.4 mOhms 4 V 183 nC  
STH260N6F6-2
1000+
$3.360
2000+
$3.190
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI 20 V SMD/SMT H2PAK-2     Reel 1 Channel Si N-Channel 75 V 120 A 2.4 mOhms 4 V 183 nC  
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