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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,235
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 73 A | 7.9 mOhms | 2 V | 35 nC | Enhancement | |||||
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2,496
In-stock
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Fairchild Semiconductor | MOSFET MV8 40/20V 740A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.9 mOhms | 2 V | 24 nC | Enhancement | PowerTrench | ||||
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1,107
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 7.9 mOhms | 3.7 V | 58 nC | StrongIRFET | |||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 156 A | 7.9 mOhms | 89 nC | Enhancement | ||||||
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440
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | 2 V | 47 nC | Enhancement | OptiMOS |