- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,986
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | |||
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6,009
In-stock
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IR / Infineon | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 2.2 mOhms | 3 V | 133 nC | StrongIRFET | ||||
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2,214
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 40 A | 2.2 mOhms | 2 V | 24 nC | PowerTrench | ||||
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4,985
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 25 A | 2.2 mOhms | Enhancement | PowerTrench | |||||
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991
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 277 A | 2.2 mOhms | Enhancement | PowerTrench | |||||
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1,912
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless, MV7, 60V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | |||
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7,471
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | |||
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2,178
In-stock
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Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | |||
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3,369
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | OptiMOS | ||||||
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4,836
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | |||
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4,238
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 24 A | 2.2 mOhms | 1.7 V | 34 nC | Enhancement | PowerTrench SyncFET | ||||
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780
In-stock
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Fairchild Semiconductor | MOSFET 60V N-channel LL PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.2 mOhms | 3.2 V | 12 nC | Enhancement | ||||
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GET PRICE |
90,600
In-stock
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onsemi | MOSFET NFET SO8FL 40V 200A | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 2.2 mOhms | 1.2 V | 70 nC | Enhancement | |||
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188
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 75V 520A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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109
In-stock
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Infineon Technologies | MOSFET 30V 179A 2.2 mOhm 36 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 179 A | 2.2 mOhms | 1.7 V | 36 nC | |||||
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16
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 520A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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3,000
In-stock
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Toshiba | MOSFET N-Ch 30V 2940pF 50nC 134A 90W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 134 A | 2.2 mOhms | 1.1 V | 50 nC | Enhancement | |||||
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138
In-stock
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Texas instruments | MOSFET 80V N-CH Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 200 A | 2.2 mOhms | 2.5 V | 120 nC | NexFET | ||||
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1,981
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.2 mOhms | 2.2 V | 168 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.2 mOhms | 1.2 V | 45 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.2 mOhms | 2 V to 4 V | 140 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.2 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
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VIEW | Toshiba | MOSFET MOSFET N-CH 30V, 45A | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45 A | 2.2 mOhms | Enhancement |
