- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,135
In-stock
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Fairchild Semiconductor | MOSFET 30/20V Nch PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 6.9 mOhms | Enhancement | PowerTrench | |||||
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648
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.9 mOhms | 2.2 V | 42 nC | Enhancement | ||||
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10
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 98 A | 6.9 mOhms | 1.4 V | 53.7 nC | Enhancement | ||||
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556,120
In-stock
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Toshiba | MOSFET MOSFET NCh 6.9ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 80 V | 46 A | 6.9 mOhms | 2 V to 4 V | 37 nC | Enhancement |
