- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,416
In-stock
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IR / Infineon | MOSFET MOSFT DUAL N/PCh 30V 2.4A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 2.7 A | 200 mOhms | 7.8 nC, 7.5 nC | Enhancement | |||||
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2,940
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 200 mOhms | Enhancement | UltraFET | |||||
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4,702
In-stock
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Infineon Technologies | MOSFET 50V DUAL N-CH HEXFET 130mOhms 12nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 12 nC | Enhancement | |||||
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2,258
In-stock
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IR / Infineon | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 38.7 nC | |||||
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2,601
In-stock
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Fairchild Semiconductor | MOSFET P-Channel Logic | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.1 A | 200 mOhms | Enhancement | ||||||
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1,420
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 4 V | 17 nC | Enhancement | ||||
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1,159
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | 38.7 nC | Enhancement | |||||
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1,221
In-stock
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IR / Infineon | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 3 V | 10 nC | Enhancement | ||||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | ||||
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998
In-stock
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IR / Infineon | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 58 nC | Enhancement | ||||
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53
In-stock
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IXYS | MOSFET 30.0 Amps 500V 0.002 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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360
In-stock
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onsemi | MOSFET 30V 3.9A Dual N-Channel | 20 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.9 A | 200 mOhms | 3.6 nC | Enhancement | |||||
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20
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 30A | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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8,000
In-stock
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Fairchild Semiconductor | MOSFET 100V Single | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.3 A | 200 mOhms | |||||||
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VIEW | IXYS | MOSFET 20 Amps 600V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.6 A | 200 mOhms | 3.5 V | Enhancement | CoolMOS | ||||
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VIEW | IXYS | MOSFET DIODE Id26 BVdass500 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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383
In-stock
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IR / Infineon | MOSFET 30V N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 1 V | 11 nC | Enhancement | ||||
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48
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 14.5A D2PAK-2 | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14.5 A | 200 mOhms | OptiMOS |
