- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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543
In-stock
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IXYS | MOSFET N-CH 200V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 16 A | 80 mOhms | 208 nC | |||||||
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3,650
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 50mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement | ||||||
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1,663
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 17A 95mOhm 13nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 17 A | 80 mOhms | 4.9 V | 13 nC | ||||||
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336
In-stock
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Infineon Technologies | MOSFET 150V 2 x N-CH 8.7A for Digital Audio | 20 V | Through Hole | TO-220-3 | - 40 C | Tube | 2 Channel | Si | N-Channel | 150 V | 8.7 A | 80 mOhms | 13 nC | Enhancement | |||||||
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648
In-stock
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Fairchild Semiconductor | MOSFET 150V 35a .42 Ohms/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 80 mOhms | Enhancement | PowerTrench | ||||||
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2,349
In-stock
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Infineon Technologies | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4 A | 80 mOhms | 16.7 nC | |||||||||
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GET PRICE |
13,400
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 200V 9.1A 5-Pin | 20 V | Through Hole | TO-220FP-5 | - 55 C | Tube | 2 Channel | Si | N-Channel | 200 V | 9.1 A | 80 mOhms | 19 nC | Enhancement | ||||||
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341
In-stock
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IXYS | MOSFET 300V 40A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 40 A | 80 mOhms | Enhancement | HyperFET | ||||||
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27
In-stock
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IXYS | MOSFET 500V 55A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 55 A | 80 mOhms | Enhancement | HyperFET | ||||||
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774
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 150V 8.7A 5-Pin | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 2 Channel | Si | N-Channel | 150 V | 8.7 A | 80 mOhms | 13 nC | Enhancement |