- Transistor Polarity :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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14,999
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N&P-CH ENHANCE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.7 A | 80 mOhms | Enhancement | ||||
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6,910
In-stock
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IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4 A | 80 mOhms | 16.7 nC | ||||||
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3,650
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 50mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement | |||
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38,860
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 4.0A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4 A | 80 mOhms | 16.7 nC | ||||||
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700
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 4.9A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | ||||||
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2,349
In-stock
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Infineon Technologies | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4 A | 80 mOhms | 16.7 nC | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement |
