- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,980
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 440 mA | 1.8 Ohms | 0.45 nC | Enhancement | ||||||
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665
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 1.8 Ohms | Enhancement | |||||||
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8,997
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 41V-60V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.8 Ohms | 800 pC | Enhancement | ||||||
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8,000
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 450 mA | 1.8 Ohms | Enhancement | |||||||
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2,000
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 450 mA | 1.8 Ohms | Enhancement | |||||||
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2,128
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | |||||
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1,564
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | |||||
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81
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | CoolMOS |